| 摘要 |
Provided is a light emitting device capable of reducing light attenuation within the element and having high light extraction efficiency, and a method of manufacturing the light emitting device. The light emitting device has a light emitting element having a light transmissive member and semiconductor stacked layer portion, electrodes disposed on the semiconductor stacked layer portion in this order. The light emitting element has a first region and a second region from the light transmissive member side. The light transmissive member has a third region and a fourth region from the light emitting element side. The first region has an irregular atomic arrangement compared with the second region. The third region has an irregular atomic arrangement compared with the fourth region. The first region and the third region are directly bonded. |
