| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an infrared detector which allows for performing a thin-film, thin-line and high accuracy processing of a supporting leg wiring and has enhanced detection sensitivity with reduced variation in the sensitivity, and infrared solid-state imaging device. <P>SOLUTION: An infrared detector 100 which detects infrared rays comprises a silicon substrate 1 which has a hollow part 40, an infrared detecting part 4 which is disposed above the hollow part 40 and includes a detection part, a supporting leg part 38 which retains the infrared detecting part 4 above the hollow part 40 and includes a supporting leg wiring connected to the detection part, a drive wiring layer which is disposed on a substrate around the hollow part 40 and connected to the supporting leg wiring so as to apply a drive voltage to the detection part, and a signal wiring layer which reads out signals from the detection part. One of the drive wiring layer and the signal wiring layer includes a first conductive layer 8c formed of a material capable of being silicided and a second conductive layer 8d formed on the first conductive layer 8c. The supporting leg wiring is only formed of the second conductive layer 8d. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
