发明名称 Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus
摘要 Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film.; (where R is a linear or branched alkyl group) ; (where R is an alkyl group) ; (where R is an alkyl group) ; (where A1 and A2 are represented by Formula 8) ; (where R is an alkyl group or another substituent).
申请公布号 US9040966(B2) 申请公布日期 2015.05.26
申请号 US201213981721 申请日期 2012.02.23
申请人 Sony Corporation 发明人 Kobayashi Norihito
分类号 H01L35/24;H01L51/00;C07D493/06;H01L51/05 主分类号 H01L35/24
代理机构 Rader, Fishman & Grauer PLLC 代理人 Rader, Fishman & Grauer PLLC
主权项 1. A method of producing an organic transistor, the method comprising: collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode disposed on a base substrate, a raw material solution, in a film shape, including a polymer and at least one compound of a compound represented by General Formula 1, a compound represented by General Formula 2, a compound represented by General Formula 3, a compound represented by General Formula 4, a compound having a structure represented by General Formula 4, in which R is a substituent other than an alkyl group, a compound represented by General Formula 5, a compound represented by General Formula 6, a compound having a structure represented by General Formula 5 or 6, in which R is a substituent other than an alkyl group, and a compound represented by General Formula 7, forming the gate insulating film and the organic semiconductor film on the gate insulating film by spontaneous phase separation; and forming a source electrode and a drain electrode on the organic semiconductor film (where R is a linear or branched alkyl group) (where R is a linear or branched alkyl group) (where R is a linear or branched alkyl group) (where R is an alkyl group, and a number of R's is 2 to 5) (where R is an alkyl group, and a number of R's is 1 to 5) (where R is an alkyl group, and a number of R's is 1 to 5) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent, and a number of R's is 1 to 5).
地址 Tokyo JP