发明名称 |
Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus |
摘要 |
Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film.;
(where R is a linear or branched alkyl group)
;
(where R is an alkyl group)
;
(where R is an alkyl group)
;
(where A1 and A2 are represented by Formula 8)
;
(where R is an alkyl group or another substituent). |
申请公布号 |
US9040966(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201213981721 |
申请日期 |
2012.02.23 |
申请人 |
Sony Corporation |
发明人 |
Kobayashi Norihito |
分类号 |
H01L35/24;H01L51/00;C07D493/06;H01L51/05 |
主分类号 |
H01L35/24 |
代理机构 |
Rader, Fishman & Grauer PLLC |
代理人 |
Rader, Fishman & Grauer PLLC |
主权项 |
1. A method of producing an organic transistor, the method comprising:
collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode disposed on a base substrate, a raw material solution, in a film shape, including a polymer and at least one compound of a compound represented by General Formula 1, a compound represented by General Formula 2, a compound represented by General Formula 3, a compound represented by General Formula 4, a compound having a structure represented by General Formula 4, in which R is a substituent other than an alkyl group, a compound represented by General Formula 5, a compound represented by General Formula 6, a compound having a structure represented by General Formula 5 or 6, in which R is a substituent other than an alkyl group, and a compound represented by General Formula 7, forming the gate insulating film and the organic semiconductor film on the gate insulating film by spontaneous phase separation; and forming a source electrode and a drain electrode on the organic semiconductor film (where R is a linear or branched alkyl group) (where R is a linear or branched alkyl group) (where R is a linear or branched alkyl group) (where R is an alkyl group, and a number of R's is 2 to 5) (where R is an alkyl group, and a number of R's is 1 to 5) (where R is an alkyl group, and a number of R's is 1 to 5) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent, and a number of R's is 1 to 5). |
地址 |
Tokyo JP |