| 摘要 |
Static random access memory (SRAM) cells and SRAM cell arrays are disclosed. In one embodiment, an SRAM cell includes a pull-up transistor. The pull-up transistor includes a Fin field effect transistor (FinFET) that has a fin of semi-conductive material. An active region is disposed within the fin. A contact is disposed over the active region of the pull-up transistor. The contact is a slot contact that is disposed in a first direction. The active region of the pull-up transistor is disposed in a second direction. The second direction is non-perpendicular to the first direction. |
