METHOD OF FORMING AN OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE INCLUDING AN OXIDE SEMICONDUCTOR DEVICE

摘要

In a method for manufacturing an oxide semiconductor device, a gate insulation layer to cover a gate electrode is formed on a first surface of a substrate after the gate electrode is formed on the first surface of the substrate. A source electrode and a drain electrode are formed on an active pattern after the active pattern is formed on the gate insulation layer. Ultraviolet rays are radiated on the first surface of the substrate or the second surface of the substrate facing the first surface and the first surface or the second surface of the substrate is thermally processed at the same time.