Method for controlled removal of a semiconductor device layer from a base substrate

摘要

A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

主权项

1. A method of removing a semiconductor device layer from a base substrate, said method comprising:
providing a crack propagation layer on an upper surface of a base substrate; providing a semiconductor device layer including at least one semiconductor device on the crack propagation layer, wherein said at least one semiconductor device is formed on said semiconductor layer prior to forming said semiconductor layer on said crack propagation layer; depositing a metal-containing adhesion layer on an upper surface of the semiconductor device layer; forming a stressor layer containing a metal on an upper surface of the metal-containing adhesion layer; applying a plastic sheet atop the stressor layer; etching end portions of the crack propagation layer to initiate a crack in the crack propagation layer; cleaving the etched crack propagation layer to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate; removing the cleaved crack propagation layer portion from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion from the upper surface of the base substrate; and removing said stressor layer and said plastic sheet from atop said semiconductor device layer after said cleaving.