SILICON CARBIDE SINGLE CRYSTAL PRODUCTION METHOD, AND SILICON CARBIDE SINGLE CRYSTAL PRODUCTION DEVICE

摘要

A SiC single crystal is grown from a first seed crystal (50a) formed from silicon carbide, and the SiC single crystal is cut to form a base section (51c), a tip section (51a) and a middle section (51b); the middle section (51b) is removed, the base section (51c) and tip section (51a) are joined as a second seed crystal (50b), and from the growth face (52) thereof, a SiC single crystal is grown.