Read voltage generation circuit, memory and memory system including the same

摘要

A read voltage generation circuit includes a register unit configured to store an initial read voltage code, a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code; and a voltage generation circuit configured to generate a read voltage corresponding to a read voltage code produced by the counter circuit.

主权项

1. A read voltage generation circuit comprising:
a register unit configured to store an initial read voltage code; a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code; and a voltage generation circuit configured to generate a read voltage corresponding to the read voltage code produced by the counter circuit, wherein a counting step of the counter circuit is set to be small when a memory block that is provided with the read voltage operates as a Multi-Level Cell (MLC), and is set to be large when the memory block that is provided with the read voltage operates as a Single-Level Cell (SLC).