发明名称 |
Airgap-containing interconnect structure with patternable low-k material and method of fabricating |
摘要 |
An interconnect structure is provided that includes at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate. The inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. The at least one cured and patterned low-k dielectric material and the patterned inorganic antireflective coating have conductively filled regions embedded therein and the at least one cured and patterned low-k dielectric material has at least one airgap located adjacent, but not directly in contact with the conductively filled regions. |
申请公布号 |
US9035462(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201313791502 |
申请日期 |
2013.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Lin Qinghuang |
分类号 |
H01L23/52;H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/52 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. ;Morris, Esq. Daniel P. |
主权项 |
1. An interconnect structure comprising:
at least one patterned and cured low-k dielectric material located on an upper surface of a patterned inorganic antireflective coating that is located atop a substrate, wherein said inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, said at least one cured and patterned low-k dielectric material and said patterned inorganic antireflective coating having conductively filled regions embedded therein and said at least one cured and patterned low-k dielectric material having at least one airgap located adjacent, but separated from the conductively filled regions by a portion of said low-k dielectric material. |
地址 |
Armonk NY US |