记忆体架构与其操作方法;MEMORY STRUCTURE AND OPERATION METHOD THEREFOR

摘要

操作方法应用于包括一电晶体与一电阻式记忆体元件之一电阻式记忆体晶胞。该操作方法包括：于一程式化操作时，一程式化电流通过该电晶体与该电阻式记忆体元件，以使得该电阻式记忆体元件之一电阻状态由一第一电阻状态改变成一第二电阻状态；以及于一抹除操作时，一抹除电流从该电晶体之一井区流向该电阻式记忆体元件但该抹除电流不流经该电晶体，以使得该电阻式记忆体元件之该电阻状态由该第二电阻状态改变成该第一电阻状态。; and in an erase operation, generating an erase current from a well region of the transistor to the resistive memory element but keeping the erase current from flowing through the transistor, so that the resistance state of the resistive memory element changes from the second resistance state into the first resistance state.