发明名称 WAFER PROCESSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a wafer processing method capable of reducing possibility of damaging chips even when the chips are subjected to a temperature change.SOLUTION: A wafer processing method processes a wafer in which a surface of a device wafer is sealed by a sealing material, on the device wafer, devices are formed in each of chip regions defined by a plurality of predetermined division lines. The wafer processing method comprises the steps of: dividing the wafer along the predetermined division lines to form a plurality of chips; thinning the sealing material on an outer peripheral edge of each chip either before or after performing the dividing step; and changing temperature of the chips formed in the dividing step after performing the dividing step and the thinning step. Stress in the sealing material is released by thinning the sealing material in the thinning step, thereby preventing chip from being broken due to difference in coefficients of thermal expansion between the chips and the sealing material in the temperature-changing step.</p>
申请公布号 JP2015092525(A) 申请公布日期 2015.05.14
申请号 JP20130231768 申请日期 2013.11.08
申请人 DISCO ABRASIVE SYST LTD 发明人 SUGITANI TETSUKAZU;OTAKE YUSUKE
分类号 H01L21/301 主分类号 H01L21/301
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