发明名称 TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES
摘要 Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided.
申请公布号 KR20150048084(A) 申请公布日期 2015.05.06
申请号 KR20140146464 申请日期 2014.10.27
申请人 LAM RESEARCH CORPORATION 发明人 REILLY PATRICK;TE NIJENHUIS HARALD;DRAEGER NERISSA SUE;VAN SCHRAVENDIJK BART J.;NDIEGE NICHOLAS MUGA
分类号 H01L21/31;H01L21/02;H01L21/205;H05H1/46 主分类号 H01L21/31
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