Method of manufacturing semiconductor device

摘要

To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a main surface (first main surface) of a semiconductor chip of the semiconductor device. The bump is made of gold, which is a metal material having a hardness lower than that of copper, and the width of the bump is narrower than the width of the wide width part of the wire.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a wiring substrate including a terminal formed over a first surface of the wiring substrate; (b) after the step (a), mounting a semiconductor chip over the first surface of the wiring substrate such that a back surface of the semiconductor chip faces the first surface of the wiring substrate, and such that the semiconductor chip is located in an area spaced apart from the terminal, wherein:
the semiconductor chip has a main surface, an electrode pad formed over the main surface, and the back surface opposite to the main surface, anda surface of the electrode pad having a recess; (c) after the step (b), electrically connecting the electrode pad of the semiconductor chip with the terminal of the wiring substrate via a wire, wherein:
the wire is comprised of copper, andthe wire has a first part having a diameter greater than a diameter of a second part of the wire; wherein the step (c) has following steps (c1)-(c2):
(c1) electrically connecting the first part of the wire with the electrode pad of the semiconductor chip via a bump covering the recess formed on the surface of the electrode pad such that the first part of the wire is arranged over the recess; and(c2) after the step (c1), electrically connecting the second part of the wire with the terminal of the wiring substrate, wherein the recess is fully covered with the bump in plan view, and wherein the bump is comprised of a metal material having hardness lower than that of copper.