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发明名称
将用于离子植入制程之硬光罩层图案化的方法;METHODS FOR PATTERNING A HARDMASK LAYER FOR AN ION IMPLANTATION PROCESS
摘要
本发明实施例提供一种以良好制程控制将用于离子植入制程之硬光罩层图案化的方法,特别适用于制造半导体晶片用之鳍式场效电晶体(FinFET)。在一个实施例中,一种图案化配置在基板上的硬光罩层的方法,包含:形成平坦化层于配置在基板上的硬光罩层上方;配置图案化光阻剂层于平坦化层上方;在处理腔室中图案化未被图案化光阻剂层所覆盖之平坦化层以及硬光罩层;曝露下层基板的第一部分;以及由基板移除平坦化层。
申请公布号
TW201517122
申请公布日期
2015.05.01
申请号
TW103132636
申请日期
2014.09.22
申请人
应用材料股份有限公司 APPLIED MATERIALS, INC.
发明人
胡迪宾锡桑 WOOD, BINGXI SUN;缪丽妍 MIAO, LI YAN;戴辉雄 DAI, HUIXIONG;班德亚当 BRAND, ADAM;陈咏梅 CHEN, YONGMEI;帕迪特玛达尔B PANDIT, MANDAR B.;赵清军 ZHOU, QINGJUN
分类号
H01L21/027(2006.01);H01L21/336(2006.01)
主分类号
H01L21/027(2006.01)
代理机构
代理人
蔡坤财李世章
主权项
地址
美国 US
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