| 摘要 |
<p>The invention relates to the technology of oxide semiconductors, in particular to gas sensors based on molybdenum oxide.The gas sensor based on MoO3 comprises a dielectric substrate, on one side of which is placed a sensitive layer of MoO3, with ohmic contacts applied on it, forming the sensitive zone, and on the opposite surface of the substrate is applied a heating element. The sensitive layer is made in the form of a nanocrystalline strip of a thickness of 150 nm and a width of the sensitive zone of 150 µm.</p> |
