| 摘要 |
A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation. |
| 主权项 |
1. A dry etching method for selectively etching a silicon material, the dry etching method comprising:
generating a plasma gas from a dry etching agent; and etching the silicon material by the generated plasma gas, wherein the dry etching agent comprises 1,3,3,3-tetrafluoropropene, an additive gas and an inert gas; and wherein the silicon material is at least one kind selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline, silicon, amorphous silicon and silicon carbide. |
