| 摘要 |
<p>Provided are deposition methods for boron and carbon-containing film materials. As some embodiment examples of the present invention, a deposition method for boron and carbon films with required properties such as conformality and etching speed is provided. One or more of boron- and/or carbon-containing precursors can be dissolved on a substrate at 400 degrees Celsius or below. As some embodiment examples of the present invention, deposition methods for silicon nitride films that include boron and carbon are provided. The silicon nitride films can be deposited through a deposition method including the chemical vapor deposition applying boron and carbon on the growing film and the SiN-forming atomic layer deposition.</p> |
