| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device has a semiconductor substrate including a cell region and a peripheral region and includes: a Silicon-Metal-Silicon (SMS)-structured wafer formed in the cell region, which includes a stacked structure of a first silicon substrate, a metal layer, and a second silicon substrate; and a Silicon On Insulator (SOI)-structured wafer formed in the peripheral region, which includes a stacked structure of the first silicon substrate, a silicon insulation film, and the second silicon substrate. |
| 申请公布号 |
US2015108574(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414197170 |
申请日期 |
2014.03.04 |
| 申请人 |
SK HYNIX INC. |
发明人 |
SUNG Min Chul |
| 分类号 |
H01L27/12;H01L29/78;H01L27/108 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate including a cell region and a peripheral region; a Silicon-Metal-Silicon (SMS)-structured wafer provided in the cell region and including a stacked structure of a first silicon substrate, a metal layer, and a second silicon substrate; and a Silicon On Insulator (SOI)-structured wafer provided in the peripheral region and including a stacked structure of the first silicon substrate, a first silicon insulation film on an upper surface of the first silicon substrate, the second silicon substrate, and a second silicon insulation film on a lower surface of the second silicon substrate. |
| 地址 |
Icheon-si KR |
