SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SGT (Surrounding Gate Transistor) manufacturing method which is a gate last process; and provide an SGT which functionalizes an upper part of a columnar semiconductor layer as an n-type or p-type semiconductor layer depending on a difference between work functions of metal and semiconductor.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first insulation film around a fin-shaped semiconductor layer; forming a columnar semiconductor layer above the fin-shaped semiconductor layer; forming a second insulation film, polysilicon gate electrodes and polysilicon gate wiring, in which the polysilicon gate electrode covers the second insulation film; forming a diffusion layer on the fin-shaped semiconductor layer and under the columnar silicon layer; forming a compound of metal and semiconductor on the diffusion layer on the fin-shaped semiconductor layer; depositing an interlayer insulation film and exposing the polysilicon gate electrode and the polysilicon gate wiring; etching the polysilicon gate electrode and the polysilicon gate wiring; subsequently depositing first metal to form a metal gate electrode and metal gate wiring; and forming a side wall made of the third metal on side walls of an upper part of the columnar semiconductor layer.