发明名称 |
USE OF GRAPHO-EPITAXIAL DIRECTED SELF-ASSEMBLY TO PRECISELY CUT LINES |
摘要 |
A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension Lo that is between 0.9 and 1.1 times the spacing between individual lines of the plurality of lines. |
申请公布号 |
WO2015058202(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
WO2014US61396 |
申请日期 |
2014.10.20 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. |
发明人 |
SOMERVELL, MARK H.;RATHSACK, BENJAMEN M. |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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