METHOD FOR MANUFACTURING FERROELECTRIC RANDOM ACCESS MEMORY DEVICE,申请号KR20040060288-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING FERROELECTRIC RANDOM ACCESS MEMORY DEVICE
摘要
申请公布号	KR20060011440(A)	申请公布日期	2006.02.03
申请号	KR20040060288	申请日期	2004.07.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	YEOM, SEUNG JIN
分类号	H01L27/10	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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