| 摘要 |
<p>1,005,548. Frequency modulation; semiconductor reactance circuits; transistor oscillator circuits. BENDIX CORPORATION. Aug. 6, 1963 [Aug. 6, 1962], No. 31032/63. Headings H3R and H3T. A transistor Colpitts oscillator has, between the collector and base, a piezo crystal 16 and inductor 17 shunted by frequency determining capacitors 19, 30, and voltage variations on the base, as by a pressure sensitive transducer varying a voltage divider bias network 24, 25, 26 across the base, produces variations of the collector/base capacitance 15A to frequency modulate the oscillator. Fruther, the frequency determining circuit is shunted through capacitor 10 by a second transistor 35 (emitter follower) with input (Miller) reactance varied by a voltage divider bias network 44-49 for the base which includes thermistors 45, 49 compensating the mean frequency of the oscillator for temperature variations. The emitter follower also acts as an isolator and power amplifier for the output. Specification 967,705 is referred to.</p> |
