发明名称 Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
摘要 A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
申请公布号 US9012992(B2) 申请公布日期 2015.04.21
申请号 US201213534094 申请日期 2012.06.27
申请人 Massachusetts Institute of Technology 发明人 Kim Il-Doo;Tuller Harry L.;Choi Yong Woo;Akinwande Akintunde I.
分类号 H01L21/331;H01L21/20;H01L51/00;H01L41/313 主分类号 H01L21/331
代理机构 Gesmer Updegrove LLP 代理人 Gesmer Updegrove LLP
主权项 1. A transfer layer used for the formation of a semiconductor structure comprising: a transparent substrate; and a transfer buffer layer that is formed directly on said transparent substrate that includes thin film layers of La0.5Sr0.5CoO3 (LSCO) grown at room temperature, said transfer buffer layer includes a device layer wherein one or more semiconductor device structures are formed on said device layer, said one or more semiconductor device structures include active and passive components, said one or more semiconductor device structures are coupled to a receiver structure, wherein an irradiating light source separates said transfer buffer layer directly from said transparent substrate, said irradiating light source irradiates light energy that passes through said transparent substrate and is directly absorbed by the transfer buffer layer after passing through said transparent substrate.
地址 Cambridge MA US