| 摘要 |
<p>Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a surrounding circuit structure on a first substrate, a cell array structure on the surrounding circuit structure, and a second substrate between the surrounding circuit structure and the cell array structure. The cell array structure comprises a laminate structure including a plurality of gate electrodes which are arranged on the second substrate, and a vertical semiconductor pattern which is formed in a penetration hole penetrating the laminate structure and the second substrate, and is adjacent to the surrounding circuit structure.</p> |
