Light-emitting semiconductor chip

摘要

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

主权项

1. A semiconductor chip comprising a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising:
an n-conductive multilayer structure, wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least one doping peak; a p-conductive semiconductor layer; and an active region provided for generating radiation, the active region arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer wherein the n-conducting multilayer structure comprises a quantum structure with a plurality of quantum layers, the quantum layers being arranged between barrier layers; wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least a first doping peak and a second doping peak; wherein at least one of the plurality of quantum layers of the n-conductive multilayer structure is arranged between the first doping peak and the second doping peak; wherein the n-conducting multilayer structure comprises a region that is adjacent to the first doping peak, the quantum layers and the barrier layers adjacent to the quantum layers having a low doping concentration in said region, wherein the low doping concentration is at least 1*1016 cm−3 and at most 1*1018 cm−3; and wherein a sub-region of the quantum structure of the n-conductive multilayer structure comprises a high doping concentration by way of the second doping peak.