Semiconductor device and method of forming the same

摘要

A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second direction. A first gate insulating film is disposed in a lower portion of the first gate groove. A first gate electrode is disposed on the first gate insulating film. The first gate electrode is disposed in the lower portion of the first gate groove. A buried insulating film is disposed over the first gate electrode. The buried insulating film is disposed in an upper portion of the first gate groove.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having first and second isolation grooves, the first isolation grooves extending in a first direction, the first isolation grooves defining a first active region, the second isolation groove extending in a second direction different from the first direction, the second isolation groove extending to divide the first isolation groove into divided groove portions, the second isolation groove extending to divide the first active region into device formation regions, the device formation regions being defined by the first and second isolation grooves, the device formation regions each having a first gate groove extending in the second direction; a first isolation insulating film in the first isolation groove; a second isolation insulating film in the second isolation groove; a first gate insulating film in a lower portion of the first gate groove; a first gate electrode on the first gate insulating film, the first gate electrode being in the lower portion of the first gate groove; a first buried insulating film over the first gate electrode, the first buried insulating film being in an upper portion of the first gate groove; a first diffusion region in the device formation region, the first diffusion region being disposed in a first side of the first gate groove; and a second diffusion region in the device formation region, the second diffusion region being disposed in a second side of the first gate groove, opposite to the first side.