发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To prevent adhesion of an insulating resin layer for filling a gap between a semiconductor chip and a substrate and the like to a holder of a semiconductor chip when the semiconductor chip is mounted on the substrate and the like.SOLUTION: A semiconductor device manufacturing method comprises: a process of preparing a first substrate having a connection pad on a first surface; a process of preparing a second substrate on which bump electrodes are arranged on a second surface and a resin filler is formed on the second surface so as to cover the bump electrodes; a process of selectively applying specific energy to a partial region of the resin filler to form a semi-cured layer; and a process of mounting the second substrate on the first substrate so as to oppose the second surface to the first surface and electrically connecting the bump electrodes to the connection pads and filling a gap between the first substrate and the second substrate with the resin filler.</p>
申请公布号 JP2015076539(A) 申请公布日期 2015.04.20
申请号 JP20130212554 申请日期 2013.10.10
申请人 MICRON TECHNOLOGY INC 发明人 KASHIWATANI EMI;HATAKEYAMA KOICHI
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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