SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a technology that is advantageous for improving transfer efficiency of electric charge generated by photoelectric conversion.SOLUTION: A solid-state imaging device comprises: a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method so that an impurity concentration becomes lower from a lower side toward an upper side; a second semiconductor region of the first conductivity type provided on the first semiconductor region; and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form PN junction with the second semiconductor region. The impurity concentration distribution of the second semiconductor region is adjusted by the ion implantation method.