<p>A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 µm, or has a volume exceeding 1 mm 3 , or a combination of such characteristics.</p>
申请公布号
EP1780315(B1)
申请公布日期
2015.04.15
申请号
EP20060076850
申请日期
2002.12.13
申请人
ELEMENT SIX TECHNOLOGIES LIMITED
发明人
SCARSBROOK, GEOFFREY ALAN;MARTINEAU, PHILIP MAURICE;TWITCHEN, DANIEL JAMES;WHITEHEAD, ANDREW JOHN;COOPER, MICHAEL ANDREW;DORN, BARBEL SUSANNE CHARLOTTE
