发明名称 |
Layer stack |
摘要 |
In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V. |
申请公布号 |
US9006899(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201213716017 |
申请日期 |
2012.12.14 |
申请人 |
Infineon Technologies AG |
发明人 |
Ganitzer Paul;Matoy Kurt;Sporn Martin;Harrison Mark |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/498;H01L21/02 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A layer stack, comprising:
a first layer, wherein the first layer contains Ti and has a thickness in a range from 100 nm to 400 nm; an intermediate layer disposed over the first layer, wherein the intermediate layer contains Al and has a thickness in a range from 30 nm to 50 nm, wherein the Al is partly converted to an intermetallic phase with a metal from the group consisting of Ti, Ni and V; a second layer disposed over the intermediate layer, wherein the second layer contains NiV and has a thickness in a range from 200 nm to 400 nm; and a third layer disposed over the second layer, wherein the third layer contains Ag and has a thickness in a range from 200 nm to 600 nm. |
地址 |
Neubiberg DE |