发明名称 Method of fabricating a semiconductor device
摘要 <p>Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device comprises the steps of: preparing a template including a three-dimensional stepped structure engraved; forming an imprint pattern having the stepped structure by using the template; and forming a stepped pattern on the substrate at the same time by using the imprint pattern.</p>
申请公布号 KR20150039383(A) 申请公布日期 2015.04.10
申请号 KR20130117885 申请日期 2013.10.02
申请人 发明人
分类号 H01L21/027;H01L21/8247 主分类号 H01L21/027
代理机构 代理人
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