| 发明名称 |
ETCHING SOLUTION FOR AN ALUMINUM OXIDE FILM, AND METHOD FOR MANUFACTURING A THIN-FILM SEMICONDUCTOR DEVICE USING THE ETCHING SOLUTION |
| 摘要 |
An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3. |
| 申请公布号 |
US2015099327(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201414401599 |
申请日期 |
2014.03.07 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
Higashi Hirofumi;Hidaka Yoshiharu |
| 分类号 |
C09K13/04;H01L21/441;H01L21/465 |
主分类号 |
C09K13/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching solution comprising:
phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3. |
| 地址 |
Osaka JP |
