SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate and a silicon carbide semiconductor device with a silicon carbide semiconductor substrate, the substrate and device being capable of suppressing warp.SOLUTION: A silicon carbide semiconductor substrate 10 includes a first principal plane 10a and a second principal plane 10b opposite to the first principal plane 10a, and contains nitrogen as impurity. A ratio in which a thickness d of the silicon carbide semiconductor substrate 10 is divided by a maximum diameter 2R of the first principal plane 10a is 4×10or less, and the concentration of nitrogen is 1×10cmor more.