PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.

主权项

1. A plasma processing apparatus that performs a process on a substrate accommodated in a processing vessel by exciting a processing gas introduced in the processing vessel into plasma, the plasma processing apparatus comprising:
a central inlet unit configured to introduce a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of the substrate; a peripheral inlet unit configured to introduce the processing gas toward a periphery portion of the substrate; a flow rate adjusting unit configured to adjust a flow rate of the processing gas introduced toward the central portion of the substrate from the central inlet unit, and, also, configured to adjust a flow rate of the processing gas introduced toward the periphery portion of the substrate from the peripheral inlet unit; and a controller configured to control the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.