| 摘要 |
In one embodiment, a first wiring line is pulled out from an active area, and a short ring circuit is provided in a peripheral portion of the active area. A first electrode is formed in the same layer as the first wiring line. A semiconductor layer is formed on the first electrode. A portion of a second electrode faces the first electrode through an insulating layer and arranged on the semiconductor layer. A third electrode is arranged on the semiconductor layer in the same layer as the second electrode. The first electrode includes a cutout portion arranged under an edge of the second electrode. |
