| 摘要 |
The present invention provides a composition for forming a silicon-containing resist under layer film comprises a silicon-containing compound (A 1 ) which is obtained by hydrolysis, condensation or hydrolysiscondensation of a silicon compound (A-1) containing one or more compounds represented by the following general formula (1),
wherein R represents an organic group having 1 to 6 carbon atoms, R a , R b and R c each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5‰§x+z‰§1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7‰§x+y+z‰§1, and the case where (x, y, z)=(1, 1, 1) is not included. There can be provided a composition for forming a silicon-containing resist under layer film which is to form a resist under layer film with extremely less number of coating defects, and excellent in adhesiveness in fine pattern and etching selectivity. |
