| 摘要 |
According to exemplary embodiments of the present disclosure, a capacitor (CSR, CHOLD, CLOW,COUT1, COUT2) may be connected to a gate electrode of a transistor (T6, T12, S8, S14). The capacitor (CSR, CHOLD, CLOW,COUT1, COUT2) includes a lower electrode (11, 13, 15, 51, 53) connected to the gate electrode of the transistor (T6, T12, S8, S14), a gate insulation layer (GI1) formed on the first gate electrode, and an upper electrode (10, 14, 16, 52, 54) formed on the gate insulation layer (GI1). The upper electrode (10, 14, 16, 52, 54) is formed to cover a region where the lower electrode (11, 13, 15, 51, 53) and the upper electrode (10, 14, 16, 52, 54) are overlapped wherein at least one of the upper electrode (10, 14, 16, 52, 54) and the lower electrode (12, 13, 15, 51, 53) has an area greater than the overlap area. The capacitor (CSR, CHOLD, CLOW,COUT1, COUT2) is applicable to at least one of a light emitting driving circuit and a scan driving circuit, and at least one of the light emitting driving circuit and the scan driving circuit may be included in a display device. |
