Semiconductor device manufacturing method

摘要

A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect and a space thereon within the first interconnect trench, and a second interconnect and a space thereon within the second interconnect trench; forming a first trench larger in width from the first interconnect trench and a second trench larger in width from the second interconnect trench, by conducting isotropic-etching; and forming a first insulating film within the first trench and a second insulating film within the second trench by filling an insulating material in the first trench and the second trench.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first interconnect trench and a second interconnect trench adjacent to the first interconnect trench in an interlayer insulating film; providing a first interconnect and a space on the first interconnect within said first interconnect trench, and a second interconnect and a space on the second interconnect within said second interconnect trench; forming a first trench resulting from said first interconnect trench being increased in width and a second trench resulting from said second interconnect trench being increased in width, by carrying out isotropic etching, to expose a respective protrusion portion of each of the first interconnect in the first trench and the second interconnect in the second trench; and forming a first insulating film within said first trench and a second insulating film within said second trench by filling an insulating material in said first trench and said second trench.