发明名称 Formation of non-magnetic grooves
摘要 A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.
申请公布号 US8999118(B2) 申请公布日期 2015.04.07
申请号 US201313835544 申请日期 2013.03.15
申请人 Seagate Technology LLC 发明人 Tabakovic Ibro;Riemer Steve;Gong Jie;Kief Mark Thomas;Sun Ming
分类号 C25F3/14;C25D5/02;C25D11/20;C25D11/34;G11B5/84;G11B5/858;G11B5/65;B82Y10/00;G11B5/74;G11B5/82;G11B5/855 主分类号 C25F3/14
代理机构 代理人
主权项 1. A method comprising: selectively removing cobalt from one or more of portions of a cobalt-containing magnetic film layer on a surface of a substrate using a first electrolyte solution, the substrate comprising a resist layer over the cobalt-containing magnetic film, the resist layer comprising one or more pattern features exposing one or more of the portions of the cobalt-containing magnetic film, wherein the removal of cobalt forms a groove in the cobalt-containing magnetic film layer; depositing a non-magnetic matrix in the groove using second electrolyte solution comprising a substantially similar electrolytic composition as the first electrolyte solution used for the selective removal of cobalt; controlling the rate of deposition of the non-magnetic matrix through application of an amount of current sufficient to adjust an electric potential of the second electrolyte solution; and controlling the rate of selective removal of cobalt through application of an amount of current sufficient to adjust an electric potential of the first electrolyte solution.
地址 Cupertino CA US