发明名称 |
SEMICONDUCTOR UNIT AND TEST METHOD |
摘要 |
A semiconductor unit includes: a substrate made of a semiconductor; and a device group formed on the substrate and configured of a plurality of first capacitors, in which the device group includes one or a plurality of first conductive layers and a second conductive layer, the first and second conductive layers provided to be superimposed on each other in part or as a whole with an insulating film in between, the first conductive layer includes an edge extending along one direction, the second conductive layer includes a plurality of sub-conductive layers having substantially same shapes as one another, and the plurality of sub-conductive layers are arranged in relatively different positions with respect to the edge of the first conductive layer. |
申请公布号 |
US2015091603(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414489557 |
申请日期 |
2014.09.18 |
申请人 |
Sony Corporation |
发明人 |
Tomita Manabu;Fukuzaki Yuzo;Ogawa Kazuhisa |
分类号 |
H01L21/66;G01R31/28;G01B7/31;H01L27/08 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor unit comprising:
a substrate made of a semiconductor; and a device group formed on the substrate and configured of a plurality of first capacitors, wherein the device group includes one or a plurality of first conductive layers and a second conductive layer, the first and second conductive layers provided to be superimposed on each other in part or as a whole with an insulating film in between, the first conductive layer includes an edge extending along one direction, the second conductive layer includes a plurality of sub-conductive layers having substantially same shapes as one another, and the plurality of sub-conductive layers are arranged in relatively different positions with respect to the edge of the first conductive layer. |
地址 |
Tokyo JP |