WHITE LED CHIP AND WHITE LED PACKAGING DEVICE

摘要

A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

主权项

1. A white LED chip, comprising:
a P-type layer; a tunneling structure disposed over the P-type layer, wherein the tunneling structure comprises a first barrier layer, an active layer and a second barrier layer, wherein the first barrier layer comprises a first material layer, the active layer comprises a second material layer, and the second barrier layer comprises a third material layer; an N-type layer disposed over the tunneling structure; an N-type electrode in contact with the N-type layer; and a P-type electrode in contact with the P-type layer, wherein an energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer, wherein each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.