发明名称 |
METHODS OF FORMING FINFET SEMICONDUCTOR DEVICES USING A REPLACEMENT GATE TECHNIQUE AND THE RESULTING DEVICES |
摘要 |
One method disclosed includes, among other things, forming a raised isolation post structure between first and second fins, wherein the raised isolation post structure partially defines first and second spaces between the first and second fins, respectively, and forming a gate structure around the first and second fins and the raised isolation post structure, wherein at least portions of the gate structure are positioned in the first and second spaces. One illustrative device includes, among other things, first and second fins, a raised isolation post structure positioned between the first and second fins, first and second spaces defined by the fins and the raised isolation post structure, and a gate structure positioned around a portion of the fins and the isolation post structure. |
申请公布号 |
US2015091100(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314044120 |
申请日期 |
2013.10.02 |
申请人 |
International Business Machines Corporation ;GLOBAL FOUNDRIES Inc. |
发明人 |
Xie Ruilong;Cai Xiuyu;Cheng Kangguo;Khakifirooz Ali |
分类号 |
H01L29/78;H01L27/088;H01L21/762;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a FinFET transistor above a semiconductor substrate, wherein the method comprises:
performing at least one etching process so as to define first and second fins in said substrate; forming a raised isolation post structure between said first and second fins, said raised isolation post structure having an upper surface that is at a level that is approximately equal to or greater than a level of an upper surface of each of said first and second fins, said raised isolation post structure partially defining a first space between said raised isolation post structure and said first fin and a second space between said raised isolation post structure and said second fin; and forming a gate structure around a portion of each of said first and second fins and around a portion of said raised isolation post structure, wherein at least portions of said gate structure are positioned in said first and second spaces. |
地址 |
Armonk NY US |