发明名称 |
QUARTZ CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE QUARTZ CRUCIBLE |
摘要 |
There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline. |
申请公布号 |
EP2251460(A4) |
申请公布日期 |
2015.04.01 |
申请号 |
EP20090714081 |
申请日期 |
2009.03.02 |
申请人 |
JAPAN SUPER QUARTZ CORPORATION |
发明人 |
SHIMAZU, ATSUSHI;SATO, TADAHIRO |
分类号 |
C30B15/10;C03B20/00;C30B29/06 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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