Etching trenches in a substrate

摘要

Etch stabilizing ions (37) are introduced, e.g., by ion implantation (34), into a portion (36) of a substrate (20) underlying an etch window (24) in a masking layer (22) covering the substrate (20), where a trench (26) is desired to be formed. When the portion (36) of the substrate (20) containing the etch stabilizing ions (37) is etched to form the trench (26), the etch stabilizing ions (37) are progressively released at the etch interface (28′) as etching proceeds, substantially preventing gas micro-bubbles or other reaction products at the etch interface (28′) from disrupting etching. Using this method (700), products containing trenches (26) are much more easily formed and such trenches (26) have much smoother interior surface (28).

主权项

1. A method for providing an electronic product containing one or more trenches, comprising:
providing a substrate comprising a semiconductor material body having a principal surface; forming a dielectric layer over the principal surface of the semiconductor material body; producing at least one etch window in the dielectric layer; introducing etch stabilizing ions into a portion of the semiconductor material body of the substrate proximate the principal surface and through the etch window in the dielectric layer, the etch stabilizing ions consisting essentially of fluorine ions implanted to a fluorine ion concentration greater than 5E18 ions per cm3; and forming the one or more trenches by etching away at least part of the semiconductor material body of the substrate containing the etch stabilizing ions through the etch window in the dielectric layer, the one or more trenches each comprising a cavity or micro-cavity extending into, but not through the semiconductor material body of the substrate, and having a width between about 500 and 1200 micrometers.