Bulk fin-field effect transistors with well defined isolation

摘要

A process fabricates a fin field-effect-transistor by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion of the semiconductor substrate thereby forming an exposed portion of the semiconductor substrate within the cavity. A dopant is implanted into the exposed portion of the semiconductor substrate within the cavity thereby creating a dopant implanted exposed portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate.

主权项

1. A method for forming a fin field-effect-transistor, the method comprising:
forming a dummy fin structure on a semiconductor substrate; forming a dielectric layer on the semiconductor substrate, the dielectric layer surrounding the dummy fin structure; removing the dummy fin structure so that a cavity is formed within the dielectric layer, wherein the cavity exposes a portion of the semiconductor substrate thereby forming an exposed portion of the semiconductor substrate within the cavity; implanting a dopant into the exposed portion of the semiconductor substrate within the cavity thereby creating a dopant implanted exposed portion of the semiconductor substrate within the cavity, wherein the dopant is a punch-through stopper dopant; epitaxially growing a semiconductor layer within the cavity atop the dopant implanted exposed portion of the semiconductor substrate; and removing, after the semiconductor layer has been epitaxially grown, the dielectric layer to form a fin structure comprising the semiconductor layer, the fin structure atop the dopant implanted exposed portion of the semiconductor substrate.