发明名称 Method and apparatus for a conductive pillar structure
摘要 A method and apparatus for a conductive pillar structure is provided. A device may be provided, which may include a substrate, a first passivation layer formed over the substrate, a conductive interconnect extending through the first passivation layer and into the substrate, a conductive pad formed over the first passivation layer, and a second passivation layer formed over the interconnect pad and the second passivation layer. A portion of the interconnect pad may be exposed from the second passivation layer. The conductive pillar may be formed directly over the interconnect pad using one or more electroless plating processes. The conductive pillar may have a first and a second width and a first height corresponding to a distance between the first width and the second width.
申请公布号 US8994171(B2) 申请公布日期 2015.03.31
申请号 US201313795081 申请日期 2013.03.12
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang Jung-Hua;Huang Cheng-Lin;Liu Nai-Wei;Hung Jui-Pin;Lin Jing-Cheng
分类号 H01L29/40;H01L21/44;H01L23/00 主分类号 H01L29/40
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method comprising: forming an interconnect structure through a first passivation layer and into a substrate; forming an interconnect pad over the interconnect structure and a portion of the first passivation layer; forming a second passivation layer over the interconnect pad and the first passivation layer, wherein a portion of the interconnect pad remains exposed after the forming the second passivation layer; and forming a conductive pillar directly over the exposed portion of the interconnect pad using an electroless plating process, wherein sides of the conductive pillar extend over portions of the second passivation layer adjacent to the exposed portion of the interconnect pad.
地址 Hsin-Chu TW