| 发明名称 |
Method for Producing Semiconductor Regions Including Impurities |
| 摘要 |
A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench. |
| 申请公布号 |
US2015087129(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201314035185 |
申请日期 |
2013.09.24 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Konrath Jens Peter;Kern Ronny;Schulze Hans-Joachim |
| 分类号 |
H01L29/36 |
主分类号 |
H01L29/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a trench in a first surface of a semiconductor body; implanting impurity atoms into a bottom of the trench to form a first implant region; extending the trench deeper into the semiconductor body, thereby forming a deeper trench; implanting impurity atoms into a bottom of the deeper trench to form a further implant region; and; after forming the further implant region, annealing the first implant region and the further implant region to diffuse impurity atoms from the first implant region and the further implant region into the semiconductor body. |
| 地址 |
Villach AT |
