| 发明名称 | Semiconductor device having internal voltage generating circuit | ||
| 摘要 | To include an internal voltage generating circuit that includes a capacitor having a first electrode and a second electrode and generates an internal voltage by repeating a charge operation for charging the capacitor to a VDD level and a discharge operation for applying the VDD level to the first electrode of the capacitor to generate a voltage of two times the VDD level on the second electrode, and a control circuit that performs a control to apply a voltage that is lower than the VDD level to the capacitor when the internal voltage generating circuit is in a standby state. According to the present invention, when the internal voltage generating circuit is in a standby state, because a voltage applied to both ends of the capacitor is reduced, it is possible to reduce the power consumption due to a leakage current. | ||
| 申请公布号 | US8987937(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201012926589 | 申请日期 | 2010.11.29 |
| 申请人 | PS4 Luxco S.a.r.l. | 发明人 | Hayashi Koichiro |
| 分类号 | H02J1/10;H02J3/38;H02J7/34;H02J1/00;H03K3/01;H05F3/02;H02M3/07;H02M1/00 | 主分类号 | H02J1/10 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A semiconductor device comprising: a first internal voltage generating circuit that includes a capacitor including a first electrode and a second electrode, and the first internal voltage generating circuit to generate an internal voltage by repeating: a charge operation for charging the capacitor to a first voltage; and a discharge operation for applying a second voltage to the first electrode of the capacitor to generate a third voltage that is greater than the first and the second voltages on the second electrode in absolute value; and a control circuit to perform a control by applying a fourth voltage that is less than the first voltage to the capacitor when the first internal voltage generating circuit is in a standby state. | ||
| 地址 | Luxembourg LU | ||