发明名称 Device and method for stripping a product substrate from a carrier substrate
摘要 Device for stripping a product substrate from a carrier substrate connected to the product substrate by an interconnect layer by means of a flexible film that is mounted on a film frame and that comprises an adhesive layer for holding the product substrate in a bonding surface section of the film, the film being mounted on the film frame in an attachment section of the film that surrounds the bonding surface section, and the film comprising a stripping section that is located between the bonding surface section and the attachment section, the device having stripping means for effecting a stripping of the product substrate from the carrier substrate from a periphery of the product substrate.
申请公布号 US8986496(B2) 申请公布日期 2015.03.24
申请号 US201314013145 申请日期 2013.08.29
申请人 EV Group GmbH 发明人 Lindner Friedrich Paul;Burggraf Jurgen
分类号 B32B38/10;B32B43/00;H01L21/683;H01L21/67 主分类号 B32B38/10
代理机构 Kusner & Jaffe 代理人 Kusner & Jaffe
主权项 1. A method for at least partially detaching a semiconductor wafer from a carrier substrate wherein a connecting layer is disposed between a planar surface of the semiconductor wafer and an opposite facing planar surface of the carrier substrate, said connecting layer for bonding the semiconductor wafer to the carrier substrate, said method comprising steps of: securing a second planar surface of the semiconductor wafer to a film, exposing the connecting layer to fluid materials that include a connection detachment material for dissolving the connecting layer, exposing the connecting layer to sound waves produced by a sound generating device for accelerating the rate that the semiconductor wafer is detached from the carrier substrate, and moving the semiconductor wafer and the carrier substrate relative to each other to separate the semiconductor wafer from the carrier substrate wherein, during the step of exposing the connecting layer to fluid materials, the connection detachment material initially contacts the connecting layer only at a side edge of the connecting layer that is disposed perpendicular to the planar surface of the semiconductor wafer.
地址 St. Florian am Inn AT