发明名称 |
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer. |
申请公布号 |
US2015076503(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414553223 |
申请日期 |
2014.11.25 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
SAKAKURA Masayuki;TAKAHASHI Shuhei;IKEDA Kazuko;FUTAMURA Tomoya |
分类号 |
H01L51/52;H01L27/32 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting device comprising:
a thin film transistor; an insulating layer formed over the thin film transistor; a first electrode formed over the insulating layer and electrically connected to the thin film transistor; a second electrode electrically connected to the first electrode; a film selectively formed between the insulating layer and the second electrode; and a light emitting element formed by interposing a light emitting layer between the second electrode and a third electrode, wherein the film is formed of a different material from the insulating layer. |
地址 |
Atsugi-shi JP |